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Mobilna Elektronika Praktyczna

Podzespoły  PWD13F60 - sterownik mostkowy z tranzystorami MOSFET 


Firma STMicroelectronics wprowadziła do oferty układ SiP typu PWD13F60. Zawiera on jednofazowy mostek zrealizowany z użyciem tranzystorów MOSFET o napięciu przebicia Uds=600 V, Id=8 A i Rds(on)=320 mΩ. Układ jest produkowany w obudowie zajmującej powierzchnię (13×10) mm, co stanowi około 60% powierzchni zajmowanej przez obwód zrealizowany z zastosowaniem komponentów dyskretnych.

Producent przewidział możliwość skonfigurowania PWD13F60 jako mostka lub dwóch układów półmostkowych. Oprócz tranzystorów mocy układ zawiera sterowniki bramek tranzystorów i diody bootstrap. Zoptymalizowano je pod kątem uzyskania dużej niezawodności i małej emisji zaburzeń EMI.

Sterownik pracuje przy zasilaniu napięciem od 6,5 V i może być sterowany za pomocą przebiegów o napięciu z zakresu 3,3...15 V. Zawiera zabezpieczenie podnapięciowe i przed równoczesnym przewodzeniem obu tranzystorów wyjściowych (high-side/low-side cross-conduction).

Więcej na www.st.com

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czwartek, 22 lutego 2018 17:59

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czwartek, 22 lutego 2018 15:57

Samsung building new 7nm foundry plant to catch up with TSMC

A South Korean news outlet has reported that Samsung is going to break ground this week for a new 7-nanometer foundry plant. It’s going to hold a ceremony with some 100 local residents in Hwaseong on Friday to mark the ground breaking. A Samsung official has said that this new plant is planned to be used largely for foundry production but it could be expanded further to produce other components. The new 7nm foundry will be equipped with the latest Extreme Ultraviolet lithography equipment imported from the Netherlands. We’re previously explained in detail how Samsung’s 7nm process will be superior to rivals like TSMC because it’s going to use EUV technology compared to the traditional optical process used by TSMC. więcej na: www.sammobile.com

czwartek, 22 lutego 2018 14:02

Rising demand from data centers pushed up server DRAM revenue by 14%

The total server DRAM revenue of the top three DRAM suppliers (Samsung, SK Hynix, and Micron) rose by 13.9% QoQ in 4Q17 on the back of rising average selling price, reports DRAMeXchange, a division of TrendForce. The supply of server DRAM has not kept pace with the demand even as suppliers have assigned more capacity to their server product lines. Furthermore, the data center projects in North America have been contributing to the strong demand growth. DRAMeXchange analyst Mark Liu points out that tight supply will persist in the server DRAM market during 1Q18 as server shipments continue to show strength. Quotes of server DRAM modules are also expected to remain high. więcej na: press.trendforce.com

czwartek, 22 lutego 2018 11:55

U.S. Intel plans $5 billion investment in Israeli plant

Intel Corp plans to invest $5 billion to expand production at its Kiryat Gat plant in southern Israel, Israeli Economy Minister Eli Cohen said after talks with the U.S. chipmaker. Intel, would start expanding the plant this year and work would be completed in 2020, the minister said in a statement. A spokesman for Intel in Israel declined to comment. The U.S. semiconductor firm has said it planned to upgrade the facility to 10-nanometer technology from 22-nanometer, making chips that are smaller and faster. Intel received a state grant worth 5 percent of the $6 billion it invested in upgrading the plant in 2014, when it was also granted a reduced corporate tax rate of 5 percent for 10 years. Intel is expected to receive a further grant of up to 10 percent of the $5 billion value for the latest expansion. więcej na: www.reuters.com

czwartek, 22 lutego 2018 10:09

Broadcom and Qualcomm still jousting over buyout price

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czwartek, 22 lutego 2018 07:50

Huawei to use more smartphone SoCs from HiSilicon in 2018

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